MOSFET 2N-CH EFCP EFC6602R-A-TR
The pictures are for reference only
Description:
MOSFET 2N-CH EFCP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
2 N Channel(two)Co leakage
Logic level gate,2.5V drive
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
EFC6602R-A-TR(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28613,Price reference "real-time change" China/Hongkong。 EFC6602R-A-TR package/specs, Download EFC6602R-A-TR、Datasheet。